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Microscopic Study Of Electrical Transport Of Polycristalline Silicon Thin Film For Solar Cells

We report about microscopic study of electrical transport of polyc/ystalline Silicon (poly-Si) thin films for solar cells produced by very high frequency (VHF) plasma enhanced chemical vapor deposition using a conductive scanning probe microscope (SPM) technique. Surface morphologv and local current images are simultaneously measured. for the poly-Si layers with a thickness, d. in the range of 0.5 to 5 fan. The week correlation between the topological height and the current maximum is observed for the samples with d > 2 pm. Additionally, a rapid increase in the average current is observed as d increases 0.5 to 3 pm. An acceptable interpretation for the increase in the local conductivity is the solid phase growth in the incubation layer in the vicinity of the substrate after the 0.5-
pm-thick film growth.

Statement of Responsibility
Author(s) Haruman, Esa - Personal Name
Azferi - Personal Name
Muhida, Riza - Personal Name
Geter, Agus - Personal Name
Edition
Call Number
Subject(s) Electrical Transport
Polycristalline Silicon
Language English
Publisher Electron Microscopy Society of Malaysia
Publishing Year 2004
Specific Detail Info 13th Scientific Conference and 14th Annual General Meeting Electron Microscopy Society of Malaysia Putra Jaya, 13-15 Dec. 2004
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