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Microscopic Study Of Electrical Transport Of Polycristalline Silicon Thin Film For Solar Cells

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We report about microscopic study of electrical transport of polyc/ystalline Silicon (poly-Si) thin films for solar cells produced by very high frequency (VHF) plasma enhanced chemical vapor deposition using a conductive scanning probe microscope (SPM) technique. Surface morphologv and local current images are simultaneously measured. for the poly-Si layers with a thickness, d. in the range of 0.5 to 5 fan. The week correlation between the topological height and the current maximum is observed for the samples with d > 2 pm. Additionally, a rapid increase in the average current is observed as d increases 0.5 to 3 pm. An acceptable interpretation for the increase in the local conductivity is the solid phase growth in the incubation layer in the vicinity of the substrate after the 0.5-
pm-thick film growth.

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Publisher

Birmingham : Electron Microscopy Society of Malaysia., 2004

Collation

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Language

English

ISBN/ISSN

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Content Type

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Edition

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Subject(s)

Electrical Transport
Polycristalline Silicon

Specific Detail Info

13th Scientific Conference and 14th Annual General Meeting Electron Microscopy Society of Malaysia Putra Jaya, 13-15 Dec. 2004

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